IN-SITU OBSERVATIONS OF GAAS INITIAL GROWTH ON SI SUBSTRATES STUDIED USING AN ULTRAHIGH-VACUUM TRANSMISSION-ELECTRON MICROSCOPE MOLECULAR-BEAM EPITAXY SYSTEM
T. Yodo et al., IN-SITU OBSERVATIONS OF GAAS INITIAL GROWTH ON SI SUBSTRATES STUDIED USING AN ULTRAHIGH-VACUUM TRANSMISSION-ELECTRON MICROSCOPE MOLECULAR-BEAM EPITAXY SYSTEM, JPN J A P 2, 34(4B), 1995, pp. 491-494
An ultrahigh vacuum transmission-electron microscope equipped with a m
olecular-beam epitaxy chamber (UHV-TEM/MBE) has been constructed in or
der to observe the in situ heteroepitaxial growth stages of GaAs/Si. P
reliminary in situ TEM observations of the initial growth stages of si
ngle-crystalline GaAs on vicinal (100) Si (thickness, 20-50 Angstrom)
were carried out using this UHV-TEM/MBE system under optimized growth
conditions. The assignment of dislocations, stacking faults and/or twi
ns, and the relation with the critical-size of islands were examined b
ased on moire images in individual islands (size, 40-1000 Angstrom) fo
r the first time.