MORE THAN 10(3) TIMES PHOTOLUMINESCENCE INTENSITY RECOVERY BY SILICONINTERFACE-CONTROL-LAYER-BASED SURFACE PASSIVATION OF NEAR-SURFACE QUANTUM-WELLS

Authors
HASEGAWA H KODAMA S KOYANAGI S HASHIZUME T
Citation
H. Hasegawa et al., MORE THAN 10(3) TIMES PHOTOLUMINESCENCE INTENSITY RECOVERY BY SILICONINTERFACE-CONTROL-LAYER-BASED SURFACE PASSIVATION OF NEAR-SURFACE QUANTUM-WELLS, JPN J A P 2, 34(4B), 1995, pp. 495-498
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
4B
Year of publication
1995
Pages
495 - 498
Database
ISI
SICI code
Abstract
The latest version of the silicon interface control layer (ICL)-based passivation process utilizing a Si/Si3N4 double-layer ICL was applied to passivation of Al0.3Ga0.7As/GaAs/Al0.3Ga0.7As near-surface quantum wells (QWs). Its effectiveness was investigated using normalized PL in tensities from passivated and unpassivated QWs. Complete recovery of P L intensity was achieved by the novel passivation with an observed max imum recovery factor of 1.4x10(3).