PREPARATION AND PROPERTIES OF CUINS2 THIN-FILMS PRODUCED BY THE REACTIVE SPUTTERING METHOD

Nearly stoichiometric CuInS2 thin films have been prepared on Pyrex sl ide glass by the reactive sputtering method using CS2 as a reactive ga s at a substrate temperature of 150 degrees C by controlling the CS2 p artial pressure. Sputtering for 2 hours yields the thickness of 1 simi lar to 2 mu m. The films are preferentially oriented with the (112) pl ane parallel to the substrate. The forbidden gap is estimated to be 1. 51 eV which is slightly smaller than that of the single crystal. For f ilms with fairly good stoichiometry, the conduction is p-type and the resistivity ranges between 10 and 10(4) Omega . cm. A fairly large amo unt of carbon is incorporated during growth.