ROOM-TEMPERATURE EPITAXIAL-GROWTH OF CEO2 THIN-FILMS ON SI(111) SUBSTRATES FOR FABRICATION OF SHARP OXIDE SILICON INTERFACE/

Authors
YOSHIMOTO M SHIMOZONO K MAEDA T OHNISHI T KUMAGAI M CHIKYOW T ISHIYAMA O SHINOHARA M KOINUMA H
Citation
M. Yoshimoto et al., ROOM-TEMPERATURE EPITAXIAL-GROWTH OF CEO2 THIN-FILMS ON SI(111) SUBSTRATES FOR FABRICATION OF SHARP OXIDE SILICON INTERFACE/, JPN J A P 2, 34(6A), 1995, pp. 688-690
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
34
Issue
6A
Year of publication
1995
Pages
688 - 690
Database
ISI
SICI code
Abstract
Room-temperature (20 degrees C) epitaxy of high-melting point CeO2 thi n films was achieved for the first time on Si(111) substrates. Cross-s ectional high-resolution transmission electron microscopy, Rutherford backscattering spectrometry and ion scattering spectroscopy confirmed the formation of a sharp oxide/silicon heterointerface with no boundar y amorphous layer and single crystallinity of the present CeO2 films. This was achieved by pulsed laser deposition in an ultrahigh vacuum un der optimized oxygen partial pressures and by hydrogen termination of the Si surface.