GROWTH OF THIN, HYDROUS OXIDE-FILMS AT PD ELECTRODES

Citation
Aj. Zhang et al., GROWTH OF THIN, HYDROUS OXIDE-FILMS AT PD ELECTRODES, Journal of electroanalytical chemistry [1992], 389(1-2), 1995, pp. 149-159
Citations number
40
Categorie Soggetti
Electrochemistry,"Chemistry Analytical
Journal title
Journal of electroanalytical chemistry [1992]
ISSN journal
15726657 → ACNP
Volume
389
Issue
1-2
Year of publication
1995
Pages
149 - 159
Database
ISI
SICI code
Abstract
The electrochemistry of polycrystalline Pd has been examined in alkali ne and acidic solutions, with the focus being on the growth and reduct ion of thin, hydrous Pd oxide (beta-oxide) films. In the first few cyc les of potential between 0.47 and 2.8 V (reversible hydrogen electrode ), the typical potential limits for beta-oxide growth employed in this work, a compact, anhydrous Pd oxide (alpha-oxide) film forms first. T his alpha-oxide film has been suggested to consist of mainly PdO and s ome PdO2 at potentials positive of ca. 1.5 V. When the alpha-oxide fil m is ca. five monolayers in thickness, the conversion of the alpha- to beta-oxide commences at certain sites, resulting in the development o f islands of alpha- and beta-Pd oxide. Evidence indicates that, with i ncreasing oxide growth, the coverage of the electrode surface by patch es of alpha-oxide of unchanged thickness decreases slowly, reaching a steady state, while the islands of beta-oxide lengthen in the form of columns.