HIGH-PERFORMANCE INGAASP INP STRAINED-LAYER MQW LASERS WITH REVERSED-MESA RIDGE-WAVE-GUIDE STRUCTURES/

Authors
AOKI M KOMORI M TSUCHIYA T SATO H UOMI K OHTOSHI T
Citation
M. Aoki et al., HIGH-PERFORMANCE INGAASP INP STRAINED-LAYER MQW LASERS WITH REVERSED-MESA RIDGE-WAVE-GUIDE STRUCTURES/, Electronics Letters, 31(12), 1995, pp. 973-975
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
12
Year of publication
1995
Pages
973 - 975
Database
ISI
SICI code
0013-5194(1995)31:12<973:HIISML>2.0.ZU;2-H
Abstract
Compressively-strained InCaAsP/InP MQW lasers with a simple reversed-m esa ridge-waveguide structure attain 300mW output and high temperature lasing operation up to 165 degrees C.