LOW-FREQUENCY NOISE BEHAVIOR OF HIGH-ENERGY ELECTRON-IRRADIATED SI N(+)P JUNCTION DIODES

Authors
DUBUC JP SIMOEN E VASINA P CLAEYS C
Citation
Jp. Dubuc et al., LOW-FREQUENCY NOISE BEHAVIOR OF HIGH-ENERGY ELECTRON-IRRADIATED SI N(+)P JUNCTION DIODES, Electronics Letters, 31(12), 1995, pp. 1016-1018
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
12
Year of publication
1995
Pages
1016 - 1018
Database
ISI
SICI code
0013-5194(1995)31:12<1016:LNBOHE>2.0.ZU;2-Q
Abstract
The low-frequency noise behaviour in forward operation of high-energy electron irradiated Si n(+)p diodes is reported. For diodes fabricated on Czochralski substrates, negligible change in noise is observed, wh ereas for float-zone diodes, a reduction occurs after the irradiation. By comparison with reverse bias gated diode characteristics, it is co ncluded that the excess 1/f noise of the irradiated diodes is not corr elated with the irradiation-induced degradation of the Si-SiO2 interfa ce.