THIN SIO2 GROWTH BY COMBINED RAPID THERMAL AND PLASMA PROCESSING

Authors
BOUMAIZA N ACHOUR S TAYAR ME
Citation
N. Boumaiza et al., THIN SIO2 GROWTH BY COMBINED RAPID THERMAL AND PLASMA PROCESSING, Thin solid films, 261(1-2), 1995, pp. 1-3
Citations number
5
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
261
Issue
1-2
Year of publication
1995
Pages
1 - 3
Database
ISI
SICI code
0040-6090(1995)261:1-2<1:TSGBCR>2.0.ZU;2-F
Abstract
Oxidation of silicon in a d.c. plasma combined with a lamp-heated proc ess has been performed. The results show that for the same temperature this combination increases the film thickness with respect to the cla ssical rapid thermal oxidation and furnace oxidation. A relatively sho rt time and low-temperature processing lead to a low density of fixed charge.