XEPITAXIAL-GROWTH AND THERMAL-STABILITY OF THIN PD2SI FILMS ON (001)SI, (011)SI AND (111)SI

Epitaxial growth and thermal stability of Pd2Si on (001), (011): and ( 111)Si substrates have been investigated by transmission electron micr oscopy, X-ray diffraction and sheet resistance measurements. Pd2Si was found to be most stable in (111) samples. Full surface coverage was o bserved in samples annealed at 800 degrees C for 1 h. The general tren ds of the thermal stability of Pd2Si are similar in (001) and (011) sa mples. Agglomeration of Pd2Si was found to start in samples annealed a t a temperature as low as 600 degrees C. The growth of laterally unifo rm Pd2Si and resistance to island formation at high temperatures in (1 11) samples are attributed to the extensive growth of the epitaxial Pd 2Si regions. The growth of four different modes of Pd2Si epitaxy on si licon was observed and analyzed. The prominence of a certain mode of P d2Si epitaxy was found to correspond to a good lattice match with the silicon substrate. Sheet resistance data were found to correlate well with the morphological and microstructural observations.