The growth mechanism of Cu/Ni multilayers, electrodeposited from a sin
gle bath on a polycrystalline copper substrate, has been studied both
electrochemically and through transmission electron microscopy. It is
shown that Cu/Ni multilayers grow epitaxially sequentially in the pref
erential crystallographic directions [110] and [111], when the modulat
ion distance is less than approximately 10 nm. Above this value, the e
pitaxial growth is progressively replaced by a growth mechanism which
is based on nucleation followed by grain growth. This work also demost
rates that electrodeposition has a capacity to produce Cu/Ni multilaye
rs with modulation distances below 5 nm.