GROWTH-MECHANISM AND STRUCTURE OF ELECTRODEPOSITED CU NI MULTILAYERS/

Citation
L. Wang et al., GROWTH-MECHANISM AND STRUCTURE OF ELECTRODEPOSITED CU NI MULTILAYERS/, Thin solid films, 261(1-2), 1995, pp. 160-167
Citations number
22
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
ISSN journal
00406090
Volume
261
Issue
1-2
Year of publication
1995
Pages
160 - 167
Database
ISI
SICI code
0040-6090(1995)261:1-2<160:GASOEC>2.0.ZU;2-J
Abstract
The growth mechanism of Cu/Ni multilayers, electrodeposited from a sin gle bath on a polycrystalline copper substrate, has been studied both electrochemically and through transmission electron microscopy. It is shown that Cu/Ni multilayers grow epitaxially sequentially in the pref erential crystallographic directions [110] and [111], when the modulat ion distance is less than approximately 10 nm. Above this value, the e pitaxial growth is progressively replaced by a growth mechanism which is based on nucleation followed by grain growth. This work also demost rates that electrodeposition has a capacity to produce Cu/Ni multilaye rs with modulation distances below 5 nm.