HIGHLY SUPPRESSED BORON PENETRATION IN NO-NITRIDED SIO2 FOR P(-POLYSILICON GATED MOS DEVICE APPLICATIONS())

In this paper, we demonstrate the superior diffusion barrier propertie s of NO-nitrided SiO2 in suppressing boron penetration for p(+)-polysi licon gated MOS devices. Boron penetration effects have been studied i n terms of flatband voltage shift, decrease in inversion capacitance ( due to polysilicon depletion effect), impact on interface state densit y, and charge-to-breakdown, Results show that NO-nitrided SiO2, as com pared to conventional thermal SiO2, exhibit much higher resistance to boron penetration, and therefore, are very attractive for surface chan nel PMOS technology.