SIMULATION OF DEEP-SUBMICRON SOI N-MOSFET CONSIDERING THE VELOCITY OVERSHOOT EFFECT

A set of numerical simulations were performed on 0.12 mu m SOI MOSFET' s with relatively uniform channel field and charge using the hydrodyna mic model, the energy transport model, and the drift-diffusion model. The simulation results based on the advanced models (hydrodynamic and energy transport) show nearly identical results for the I-V characteri stics and they agreed quite well with the experimental results, while the results from drift-diffusion model do not. Also the simulation res ults show that both the hydrodynamic and energy transport models handl e the effect of velocity overshoot on the I-V characteristic of the 0. 12 mu m device well.