A STUDY OF TEMPERATURE AND PRESSURE-INDUCED STRUCTURAL AND ELECTRONICCHANGES IN SBCL5 INTERCALATED GRAPHITE .4. THE BASAL-PLANE RESISTIVITY

Using an inductive technique, we have measured the in-plane resistivit y rho(a) of stages 2, 4, 5, and 8 SbCl5-GIC's versus temperature T and pressure p in the ranges 130-300 K and 0-0.85 GPa. The room temperatu re values of rho(a) range from 4.0 mu Omega cm for the stages 5 sample to 7.7 mu Omega cm for the stage 8 sample. At all pressures, rho(a) s hows a metallic temperature dependence rho(a) similar to T-alpha, with 1 less than or equal to alpha less than or equal to 2, but in contras t to the c-axis resistivity rho(c), it depends only very weakly on pre ssure and/or intercalate structural order. We show that the behavior o bserved is consistent with a band conduction model.