MEASURING THE TENSOR NATURE OF STRESS IN SILICON USING POLARIZED OFF-AXIS RAMAN-SPECTROSCOPY

Authors
LOECHELT GH CAVE NG MENENDEZ J
Citation
Gh. Loechelt et al., MEASURING THE TENSOR NATURE OF STRESS IN SILICON USING POLARIZED OFF-AXIS RAMAN-SPECTROSCOPY, Applied physics letters, 66(26), 1995, pp. 3639-3641
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
26
Year of publication
1995
Pages
3639 - 3641
Database
ISI
SICI code
0003-6951(1995)66:26<3639:MTTNOS>2.0.ZU;2-B