SINGLE-ELECTRON CHARGING AT TEMPERATURES ABOVE 4 K IN ULTRASMALL LATERAL QUANTUM DOTS PATTERNED ON SHALLOW GAAS ALGAAS HETEROSTRUCTURES/

Authors
BORSOSFOLDI Z RAHMAN M LARKIN IA LONG AR DAVIES JH WEAVER JMR HOLLAND MC WILLIAMSON JG
Citation
Z. Borsosfoldi et al., SINGLE-ELECTRON CHARGING AT TEMPERATURES ABOVE 4 K IN ULTRASMALL LATERAL QUANTUM DOTS PATTERNED ON SHALLOW GAAS ALGAAS HETEROSTRUCTURES/, Applied physics letters, 66(26), 1995, pp. 3666-3668
Citations number
21
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
66
Issue
26
Year of publication
1995
Pages
3666 - 3668
Database
ISI
SICI code
0003-6951(1995)66:26<3666:SCATA4>2.0.ZU;2-Q