XENON ION-INDUCED ATOMIC TRANSPORT THROUGH ALUMINUM-NITRIDE INTERFACES

Authors
SUN J BOLSE W LIEB KP TRAVERSE A
Citation
J. Sun et al., XENON ION-INDUCED ATOMIC TRANSPORT THROUGH ALUMINUM-NITRIDE INTERFACES, Materials science & engineering. A, Structural materials: properties, microstructure and processing, 196(1-2), 1995, pp. 229-236
Citations number
25
Categorie Soggetti
Material Science
Journal title
Materials science & engineering. A, Structural materials: properties, microstructure and processing → ACNP
ISSN journal
09215093
Volume
196
Issue
1-2
Year of publication
1995
Pages
229 - 236
Database
ISI
SICI code
0921-5093(1995)196:1-2<229:XIATTA>2.0.ZU;2-N
Abstract
Low-temperature Xe ion mixing of CrxN (x = 1, 2) and TiN films on Al a nd vice versa was studied up to fluences of 2 x 10(16) Xe cm(-2). Anal ysis via Rutherford backscattering spectrometry at 0.9 MeV and 2.4 MeV alpha-energy and resonance nuclear reaction analysis provided the con centration profiles of all elements at the interface. All three elemen ts located at the interface were found to be mixed at approximately th e same rate and the athermal mixing process was mainly ballistic. Xe s egregation at the interface was also observed.