POINT DEFECT-BASED MODELING OF DIFFUSION AND ELECTRICAL ACTIVATION OFION-IMPLANTED BORON IN CRYSTALLINE SILICON

Authors
JAGER HU
Citation
Hu. Jager, POINT DEFECT-BASED MODELING OF DIFFUSION AND ELECTRICAL ACTIVATION OFION-IMPLANTED BORON IN CRYSTALLINE SILICON, Journal of applied physics, 78(1), 1995, pp. 176-186
Citations number
39
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
78
Issue
1
Year of publication
1995
Pages
176 - 186
Database
ISI
SICI code
0021-8979(1995)78:1<176:PDMODA>2.0.ZU;2-J