PHOTOLUMINESCENCE STUDIES OF RELAXATION PROCESSES IN STRAINED SI1-XGEX SI EPILAYERS/

Citation
Vv. Kveder et al., PHOTOLUMINESCENCE STUDIES OF RELAXATION PROCESSES IN STRAINED SI1-XGEX SI EPILAYERS/, Journal of applied physics, 78(1), 1995, pp. 446-450
Citations number
28
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
78
Issue
1
Year of publication
1995
Pages
446 - 450
Database
ISI
SICI code
0021-8979(1995)78:1<446:PSORPI>2.0.ZU;2-7