S. Leppavuori et al., COPPER INDIUM DISELENIDE SINGLE-CRYSTAL AND THIN-FILM INFRARED-SENSORS, Sensors and actuators. A, Physical, 47(1-3), 1995, pp. 395-398
Copper indium diselenide (CIS) and copper indium gallium diselenide (C
IGS) are now well established as exceptionally efficient semiconductor
s with potential applications in the fields of solar cells, infrared r
adiation monitors and fibre optic infrared detectors. CIGS can be dope
d both p- and n-type and has a direct band gap which can be varied bet
ween 1.02 eV and 1.68 eV. Single-crystal CIS infrared detectors were p
roduced on p-type substrates. The devices displayed photosensitivity s
ignificantly superior to that of silicon in the infrared at wavelength
s up to 1.3 mu m. Thin films were deposited by pulsed laser ablation o
f polycrystalline CIS targets using a XeCl excimer laser. The electric
al and photo response of the thin film devices, while inferior to that
from single crystals, indicated that laser ablated thin-film CIS sens
ors have potential for use as infrared detectors.