DETERMINATION OF THE HEAT-CAPACITY OF CMOS LAYERS FOR OPTIMAL CMOS SENSOR DESIGN

Authors
VONARX M PAUL O BALTES H
Citation
M. Vonarx et al., DETERMINATION OF THE HEAT-CAPACITY OF CMOS LAYERS FOR OPTIMAL CMOS SENSOR DESIGN, Sensors and actuators. A, Physical, 47(1-3), 1995, pp. 428-431
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. A, Physical → ACNP
ISSN journal
09244247
Volume
47
Issue
1-3
Year of publication
1995
Pages
428 - 431
Database
ISI
SICI code
0924-4247(1995)47:1-3<428:DOTHOC>2.0.ZU;2-9
Abstract
Static and dynamic electrical characterizations of heated microbridges are used to determine the thermophysical thin-film properties of a co mmercial CMOS IC process. The polysilicon layer and the passivation sa ndwich exhibit thermal conductivities of 28+/-3.5 and 1.48+/-0.15 W/m K; respectively. The SiO2 and passivation sandwiches have volumetric h eat capacities of (1.05+/-0.1)X10(6) and (2.7+/-0.25)x10(6) J/m(3) K.