INFRARED THERMOPILE SENSOR-BASED ON ALGAAS-GAAS MICROMACHINING

Infrared bolometry is demonstrated using broadband gold black absorber s positioned on micromachined AlGaAs membranes of high thermal resista nce. With a cascade of 20 AlGaAs thermocouple, the radiation-induced t emperature difference is measured. Black-body radiation in the range o f 315-530 K is used to test the sensor and a sensitivity of R = 145 V W-1 and corresponding detectivity of D=4.1x10(7) cm Hz(1/2) W-1 are r eached. The relatively simple technology that is compatible with MESFE T technology results in thermopile sensors that are compared to simila r sensors fabricated in polysilicon and Bi-Sb-Te technologies.