MICROMECHANICS COMPATIBLE WITH AN 0.8 MU-M CMOS PROCESS

Results on a new approach for the monolithic integration of micromecha nics and electronics are presented. The same process steps and layers can be used for both the mechanical and the electronic elements. This is a promising process concept for integrated microelectromechanical s ystems with a minimum of additional costs compared to the standard ele ctronics process. Results on the fabrication of micromechanical struct ures using the process steps of a 0.8 mu m CMOS process are given. The sublimation technique is used to dry the released surface-micromachin ed structures and different sublimating chemicals are compared. The in fluences of polycrystalline and amorphous deposition as well as diffus ion doping and ion implantation on the strain gradients of the structu ral layers are presented. A fabricated electrostatically deflectable a nd capacitively detectable cantilever is presented and the dependence of the capacitance on the drive voltage is shown. By using the present ed theory and fitting calculations to the measured non-linear characte ristic, a value of 170 GPa for Young's modulus of the polysilicon film is extracted.