SILICON PIEZORESISTIVITY MODELING - APPLICATION TO THE SIMULATION OF MOSFETS

The piezoresistive effect in silicon has been extensively studied in t his work. The Pi(11), Pi(2) and Pi(44) piezoresistive coefficients for both n-type and p-type silicon, respectively, have been analytically developed including the carrier transfer effect, the intravalley-inter valley scattering effects and the stress-induced effective mass variat ions. The contribution of the bond-gap change due to the stress has be en found to be important when the populations of electrons and holes a re comparable. By introducing the quantum effect, the bulk modelling h as been successfully extended to MOSFET devices. A good agreement betw een simulation and experiment has been achieved.