SILICON-OXIDE STRUCTURES MEASURED AT THE SURFACES OF SILICON AND SILICATE GLASS - A REFLECTIVITY STUDY

Using a newly developed reflectometer we have measured the reflectivit y of crystalline silicon and SiOx coated float glass at the silicon K absorption edge. The reflectometer can be used without the need for ul tra high vacuum. The critical angle of total reflection was determined and the reflection as function of the energy was measured below the c ritical angle. EXAFS analysis of the data reveals the oxygen content i n the samples, and the local structure around the silicon absorbers. T he measurements show the strength of ReflEXAFS as a technique to study surfaces under ''real'' conditions.