INFLUENCE OF SECONDARY EFFECTS ON THE STRUCTURE QUALITY IN DEEP X-RAY-LITHOGRAPHY

In deep X-ray lithography, synchrotron radiation is applied to pattern several hundred micrometer thick resist layers. This technique has be en used to obtain micro structures with an aspect ratio up to 100. The structures are characterized by straight walls and a typical surface roughness in between 30 to 50 nm, which are a consequence of the small divergence of synchrotron radiation and the high selectivity of the r esist-developer system. The precision of the microstructures are affec ted by photoelectrons which are generated in the resist and by diffrac tion of the synchrotron radiation at the absorber structures. Secondar y radiation which is generated during the irradiation in the X-ray mas k and the substrat, as well as the heat load, which arises from the ab sorbed X-rays in the mask and the resist determines the quality of the micro structures.