LONGITUDINAL AND TRANSVERSE MOMENTS OF THE DISTRIBUTION OF MEV TI IONS IMPLANTED IN SI MEASURED BY SIMS

1.0 and 2.0 MeV Ti ions have been implanted into silicon at different angles to study longitudinal and transverse distributions. The profile s of implanted Ti ions in Si at different angles were measured by seco ndary ion mass spectrometry (SIMS). The longitudinal and transverse mo ments are compared with the TRIM'90 Monte Carlo simulation. The result s show that the longitudinal moments-projected range and range straggl ing-are consistent with calculated values within 13% and 15% respectiv ely and the transverse moment is in agreement with the TRIM'90 simulat ion within 29%. The depth distribution obtained is also compared to Ga ussian and Pearson functions.