USE OF AMORPHOUS-SILICON THIN-LAYERS AS AN ELECTRICAL TRANSDUCER IN AN ION ELECTROCHEMICAL SENSOR

Authors
FABRY P SIEBERT E BRUYERE JC MURET P
Citation
P. Fabry et al., USE OF AMORPHOUS-SILICON THIN-LAYERS AS AN ELECTRICAL TRANSDUCER IN AN ION ELECTROCHEMICAL SENSOR, Sensors and actuators. B, Chemical, 27(1-3), 1995, pp. 407-410
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic","Instument & Instrumentation
Journal title
Sensors and actuators. B, Chemical → ACNP
ISSN journal
09254005
Volume
27
Issue
1-3
Year of publication
1995
Pages
407 - 410
Database
ISI
SICI code
0925-4005(1995)27:1-3<407:UOATAA>2.0.ZU;2-L
Abstract
A thin layer of hydrogenated amorphous silicon (a-Si:H) has been depos ited by PECVD on a NASICON (Na+ super ionic conductor) pellet used as a Na+-sensitive membrane. The conductivity of a-Si:H films has been ch aracterized and a dependence on the Na+ concentration has been noticed . This effect can be explained by a variation of the space charge at t he a-Si:H-NASICON interface. A new sensor based on this transducing mo de is proposed.