SELECTIVE COPPER CHEMICAL-VAPOR-DEPOSITION USING PD-ACTIVATED ORGANOSILANE FILMS

Conductive, adherent copper films-were deposited selectively on diamon d subtrates using ligating aminosilane self-assembled films and a Pd-b ased catalyst, Copper chemical vapor deposition (CVD) was performed at 444-456 K in a cold-walled chamber using 4 x 10(-3) Pa of oroacetylac etonato)-copper(I)-trimethylvinylsilane mixed 1:1 (v/v) with H-2 carri er gas. In the absence of the:Pd catalyst, only isolated copper partic les deposited on hydrogenated or aminosilane-coated diamond. The Pd;ca talyst enhanced selectivity for Cu deposition by a factor of 10(3) to 10(4). Copper patterns with feature sizes to 1 mu m were formed by lit hographically patterning an aminosilane film on diamond using UV (193 nm) radiation and a contact mask prior to catalyst deposition and copp er CVD. The Pd catalyst also enhanced Cu deposition on aminosilane-coa ted Si(100) and quartz substrates. Treating substrates with octadecyls ilane or aminosilane self-assembled films without the bound Pd catalys t reduced copper deposition compared to Si(100), native oxide or hydro genated diamond surfaces.