THERMOCHEMICAL AND MASS-TRANSPORT MODELIN G OF THE CHEMICAL-VAPOR-DEPOSITION OF SI1-XGEX

Authors
ROUCH H PONS M BERNARD C MADAR R
Citation
H. Rouch et al., THERMOCHEMICAL AND MASS-TRANSPORT MODELIN G OF THE CHEMICAL-VAPOR-DEPOSITION OF SI1-XGEX, Journal de physique. III, 5(6), 1995, pp. 759-773
Citations number
28
Categorie Soggetti
Material Science","Phsycs, Fluid & Plasmas","Physics, Applied
Journal title
Journal de physique. III → ACNP
ISSN journal
11554320
Volume
5
Issue
6
Year of publication
1995
Pages
759 - 773
Database
ISI
SICI code
1155-4320(1995)5:6<759:TAMMGO>2.0.ZU;2-3
Abstract
The growth of Si1-xGex layers at a high temperature (1300 K) and low p ressure (315 Pa) (by chemical vapour deposition) was studied by a ther modynamic approach and a mass transport analysis using simplifying ass umptions. The results showed that the thermodynamic analysis does not permit alone to explain the experimental measurements concerning the c omposition of the layer. The mass transport analysis showed that therm odiffusion would be of importance on layer composition and uniformity for large substrates.