TEMPERATURE AND DENSITY-DEPENDENCE OF EXCITON LIFETIMES IN GAAS ALGAAS MULTIPLE-QUANTUM WELLS

Authors
CHU JH SEO JC SHIN EJ YU SK KIM D HWANG YN PARK SH KIM U KOPEV PS
Citation
Jh. Chu et al., TEMPERATURE AND DENSITY-DEPENDENCE OF EXCITON LIFETIMES IN GAAS ALGAAS MULTIPLE-QUANTUM WELLS, Optical and quantum electronics, 27(5), 1995, pp. 387-393
Citations number
10
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Optical and quantum electronics → ACNP
ISSN journal
03068919
Volume
27
Issue
5
Year of publication
1995
Pages
387 - 393
Database
ISI
SICI code
0306-8919(1995)27:5<387:TADOEL>2.0.ZU;2-1
Abstract
The photoluminescence linewidths and exciton lifetimes of free exciton s in GaAs/AlGaAs multiple quantum wells were systematically investigat ed as a function of temperature, quantum well width, and carrier densi ty. The experimental results showed that the exciton decay processes w ere strongly related to the linewidth of the exciton and the exciton b inding energy.