OEIC TECHNOLOGIES FOR HIGH-SPEED OPTICAL INTERCONNECTION SYSTEM

As the level of integration and the power of computation increase, met hods of interconnecting computational elements attract more attention and the total system performance is bottlenecked by the problems assoc iated with electrical interconnections. Optical interconnections have advantages of practically unlimited bandwidth and absence of crosstalk . To utilize such merits of optical interconnections, a large number o f low-cost high-performance optoelectronic integrated circuits (OEICs) are needed. This paper focuses on monolithically integrated receiver OEICs that consist of InP/InGaAs p-i-n photodiodes and fully ion-impla nted InP junction field-effect transistors (JFETs). In the formation o f shallow InP p-n junctions we use a co-implantation technique in whic h we implant a group V element together with Be, a dopant, and take ad vantage of damage and stoichiometry effects. We fabricate a p-i-n/JFET amplifier receiver front-end circuit and a receiver 2 x 2 crosspoint switch circuit using this technique. We also develop bandwidth enhance ment designs using inductive peaking and cascoding. Finally, we demons trate a single-channel, free-space optical interconnection system with a bandwidth of 1.5 GHz and an interconnection length of 50 cm.