HIGH-PERFORMANCE INGAAS INP AVALANCHE PHOTODIODE FOR A 2.5-GBS-1 OPTICAL RECEIVER

Authors
PARK CY HYUN KS KANG SK SONG MK YOON TY KIM HM PARK HM PARK SC LEE YH LEE C YOO JB
Citation
Cy. Park et al., HIGH-PERFORMANCE INGAAS INP AVALANCHE PHOTODIODE FOR A 2.5-GBS-1 OPTICAL RECEIVER, Optical and quantum electronics, 27(5), 1995, pp. 553-559
Citations number
17
Categorie Soggetti
Optics,"Engineering, Eletrical & Electronic
Journal title
Optical and quantum electronics → ACNP
ISSN journal
03068919
Volume
27
Issue
5
Year of publication
1995
Pages
553 - 559
Database
ISI
SICI code
0306-8919(1995)27:5<553:HIIAPF>2.0.ZU;2-7
Abstract
High-speed mesa type SAGCM avalanche photodiodes for 2.5 Gb s-1 optica l receivers have been realized for the first time. The device is desig ned by dimensional analysis based on the electric field distribution i n a multiplication layer and a charge plate layer. Very low dark curre nt and high gain are obtained with an active region of 30 mum diameter . From the 1.55 mum wavelength 2.488 Gb s-1 transmission experiment, s ensitivity of -33.6 dBm is measured using pseudorandom (2(23) - 1) NRZ patterns.