The dual-sensing-latch circuit proposed here can solve the synchroniza
tion problem of the conventional wave-pipelined SRAM, and the proposed
source-biased self-resetting circuit reduces both the cycle and acces
s time of cache SRAM's. A 16-kb SRAM using these circuit techniques wa
s designed, and was fabricated with 0.25-mu m CMOS technology, Simulat
ion results indicate that this SRAM has a typical clock access time of
2.6 ns at 2.5-V supply voltage and a worst minimum cycle time of 2.6
ns.