HIGH-PRESSURE EFFECTS IN THE LAYERED SEMICONDUCTOR GERMANIUM SELENIDE

Authors
HSUEH HC VASS H CLARK SJ ACKLAND GJ CRAIN J
Citation
Hc. Hsueh et al., HIGH-PRESSURE EFFECTS IN THE LAYERED SEMICONDUCTOR GERMANIUM SELENIDE, Physical review. B, Condensed matter, 51(23), 1995, pp. 16750-16760
Citations number
23
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
23
Year of publication
1995
Pages
16750 - 16760
Database
ISI
SICI code
0163-1829(1995)51:23<16750:HEITLS>2.0.ZU;2-P