PRESSURE-INDUCED HALL-EFFECT SPECTROSCOPY OF SILICON DX-STATES IN PLANAR-DOPED GAAS-ALAS SUPERLATTICES

Citation
P. Sellitto et al., PRESSURE-INDUCED HALL-EFFECT SPECTROSCOPY OF SILICON DX-STATES IN PLANAR-DOPED GAAS-ALAS SUPERLATTICES, Physical review. B, Condensed matter, 51(23), 1995, pp. 16778-16784
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
51
Issue
23
Year of publication
1995
Pages
16778 - 16784
Database
ISI
SICI code
0163-1829(1995)51:23<16778:PHSOSD>2.0.ZU;2-0