OVERLAYER GROWTH AND ELECTRONIC-PROPERTIES OF THE BI GASB(11O) INTERFACE/

Authors
GAVIOLI L BETTI MG CASARINI P MARIANI C
Citation
L. Gavioli et al., OVERLAYER GROWTH AND ELECTRONIC-PROPERTIES OF THE BI GASB(11O) INTERFACE/, Physical review. B, Condensed matter, 51(23), 1995, pp. 16822-16831
Citations number
65
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
23
Year of publication
1995
Pages
16822 - 16831
Database
ISI
SICI code
0163-1829(1995)51:23<16822:OGAEOT>2.0.ZU;2-S