The reaction of electrode-confined polyaniline with trifluoroacetic an
hydride in acidified acetonitrile giving insulating and electroinactiv
e trifluoroacetylated polyaniline has been studied by electrochemistry
, reflectance IR, and microelectrochemistry. Variation of electrochemi
cal. potential from 0.2 V (reduced, most reactive) to 0.6 V (oxidized
by 0.5 electron per repeat unit, unreactive) vs SCE allows control of
the reaction rate. Reaction of trifluoroacetic anhydride with aniline
oligomers N-phenylphenylenediamine and N,N'-diphenylphenylenediamine g
ave N-trifluoroacetylation products exclusively, exhibiting positive s
hifts in oligomer oxidation potential of >0.5 V, with terminal amines
reacting considerably faster than internal amines. Reflectance IR foll
owing the potential-dependent growth of CO and CS peaks for macroelect
rode films of polyaniline treated with trifluoroacetic anhydride showe
d similar potential dependence of reactivity as conductivity measureme
nts during trifluoroacetylation of polyaniline-derivatized microelectr
ode arrays. Polyaniline trifluoroacetylation was accompanied by narrow
ing but no shifting of the potential window of electroactivity and con
ductivity, and eventual elimination of all conductivity. Trifluoroacet
ylation of polyaniline terminal amines, rapid at all potentials, does
not detectably affect conductivity. Also examined by electrochemistry
were the reactions of polyaniline with other anhydrides resulting in t
he reactivity order (F3CCO)(2)O > (Cl3CCO)(2)O > (H2ClCCO)(2)O > (HCl2
CCO)(2)O >> (H3CCO)(2)O. IR through polyaniline electrodeposited onto
optically transparent Au electrodes shows that essentially complete lo
ss of polyaniline electroactivity occurs when approximate to 25% of ni
trogens are trifluoroacetylated. Electroactivity and conductivity of t
rifluoroacetylated polyaniline may be recovered by hydrolysis in K2CO3
/CH3OH/O-2 solution to regenerate polyaniline. Use of the reversible t
rifluoroacetylation of polyaniline provides a proof-of-concept for a n
ew approach to an erasable-programmable-read-only-memory device.