MODELING AND EXPERIMENTAL-STUDY OF ALGAAS GAAS INJECTION-LASERS WITH ELECTRON SUPERLATTICE BARRIERS, EMITTING AT 780-808 NM/

A model of an AlGaAs/GaAs laser with multilayer interference barriers, used to reflect electron waves and enhance carrier confinement, was a nalysed. A double heterostructure laser emitting at 780 - 808 nm was o ptimised. This heterostructure had electron superlattice barriers with separate electron and photon confinement. Low-pressure epitaxial grow th of metal-organic compounds produced double-sided separate-confineme nt AlGaAs/GaAs heterostructures with electron superlattice barriers or three types, as well as conventional separate-confinement heterostruc tures. Stripe lasers with nitride insulation and stripe widths 100 and 200 mu m were made from these heterostructures. For the lasers with e lectron superlattice barriers, an active layer 40 nm thick, and a cavi ty 0.4-0.5 mm long, the minimum threshold current density was 0.3 kA/c m(2) and the temperature constant was T-0 = 220 K. For the lasers of t he same geometry, but without the barriers tile corresponding values w ere 0.42 kA/cm(2) and T-0 = 160 K.