DEEP-LEVEL DEFECTS RESPONSIBLE FOR PERSISTENT PHOTOCONDUCTIVITY IN GA-DOPED, CD1-XMNXTE

Authors
SEMALTIANOS NG KARCZEWSKI G HU B WOJTOWICZ T FURDYNA JK
Citation
Ng. Semaltianos et al., DEEP-LEVEL DEFECTS RESPONSIBLE FOR PERSISTENT PHOTOCONDUCTIVITY IN GA-DOPED, CD1-XMNXTE, Physical review. B, Condensed matter, 51(24), 1995, pp. 17499-17505
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
24
Year of publication
1995
Pages
17499 - 17505
Database
ISI
SICI code
0163-1829(1995)51:24<17499:DDRFPP>2.0.ZU;2-B