TRANSITION FROM ONE-SUBBAND TO 2-SUBBAND OCCUPANCY IN THE 2-DEG OF BACK-GATED MODULATION-DOPED GAAS-ALXGA1-XAS HETEROSTRUCTURES

Authors
HAMILTON AR LINFIELD EH KELLY MJ RITCHIE DA JONES GAC PEPPER M
Citation
Ar. Hamilton et al., TRANSITION FROM ONE-SUBBAND TO 2-SUBBAND OCCUPANCY IN THE 2-DEG OF BACK-GATED MODULATION-DOPED GAAS-ALXGA1-XAS HETEROSTRUCTURES, Physical review. B, Condensed matter, 51(24), 1995, pp. 17600-17604
Citations number
17
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
24
Year of publication
1995
Pages
17600 - 17604
Database
ISI
SICI code
0163-1829(1995)51:24<17600:TFOT2O>2.0.ZU;2-A