SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT

Authors
MIHALCESCU I VIAL JC BSIESY A MULLER F ROMESTAIN R MARTIN E DELERUE C LANNOO M ALLAN G
Citation
I. Mihalcescu et al., SATURATION AND VOLTAGE QUENCHING OF POROUS-SILICON LUMINESCENCE AND THE IMPORTANCE OF THE AUGER EFFECT, Physical review. B, Condensed matter, 51(24), 1995, pp. 17605-17613
Citations number
33
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
51
Issue
24
Year of publication
1995
Pages
17605 - 17613
Database
ISI
SICI code
0163-1829(1995)51:24<17605:SAVQOP>2.0.ZU;2-Z