AB-INITIO STUDIES OF GAN EPITAXIAL-GROWTH ON SIC

Citation
Rb. Capaz et al., AB-INITIO STUDIES OF GAN EPITAXIAL-GROWTH ON SIC, Physical review. B, Condensed matter, 51(24), 1995, pp. 17755-17757
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
51
Issue
24
Year of publication
1995
Pages
17755 - 17757
Database
ISI
SICI code
0163-1829(1995)51:24<17755:ASOGEO>2.0.ZU;2-X