GROWTH OF DEVICE-QUALITY GAN AT 550-DEGREES-C BY ATOMIC LAYER EPITAXY

Authors
KARAM NH PARODOS T COLTER P MCNULTY D ROWLAND W SCHETZINA J ELMASRY N BEDAIR SM
Citation
Nh. Karam et al., GROWTH OF DEVICE-QUALITY GAN AT 550-DEGREES-C BY ATOMIC LAYER EPITAXY, Applied physics letters, 67(1), 1995, pp. 94-96
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
1
Year of publication
1995
Pages
94 - 96
Database
ISI
SICI code
0003-6951(1995)67:1<94:GODGA5>2.0.ZU;2-#