INP INGAAS PHOTODETECTOR BASED ON A HIGH-ELECTRON-MOBILITY TRANSISTORLAYER STRUCTURE - ITS RESPONSE AT 1.3 MU-M WAVELENGTH/

Authors
HORSTMANN M MARSO M FOX A RUDERS F HOLLFELDER M HARDTDEGEN H KORDOS P LUTH H
Citation
M. Horstmann et al., INP INGAAS PHOTODETECTOR BASED ON A HIGH-ELECTRON-MOBILITY TRANSISTORLAYER STRUCTURE - ITS RESPONSE AT 1.3 MU-M WAVELENGTH/, Applied physics letters, 67(1), 1995, pp. 106-108
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
67
Issue
1
Year of publication
1995
Pages
106 - 108
Database
ISI
SICI code
0003-6951(1995)67:1<106:IIPBOA>2.0.ZU;2-3