1.1V HIGH-SPEED LOW-POWER BICMOS LOGIC-CIRCUIT

Authors
Citation
Yk. Seng et Ss. Rofail, 1.1V HIGH-SPEED LOW-POWER BICMOS LOGIC-CIRCUIT, Electronics Letters, 31(13), 1995, pp. 1039-1041
Citations number
3
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
ISSN journal
00135194
Volume
31
Issue
13
Year of publication
1995
Pages
1039 - 1041
Database
ISI
SICI code
0013-5194(1995)31:13<1039:1HLBL>2.0.ZU;2-6
Abstract
A 1.1 V full-swing high speed, low power BiCMOS logic circuit is prese nted. It consists of nine devices and uses noncomplementary BiCMOS pro cess. Bootstrapping and partial charge removal techniques are employed . HSPICE simulations have shown that the new circuit outperforms both CMOS and a recently reported circuit in terms of speed and power-delay product. An analytical expression relating the pull-up delay with its device parameters is also derived.