20W CW SURFACE-EMITTING 0.8-MU-M GAAS GAALAS LASER-DIODES/

Authors
VASSILAKIS E FILLARDET T GROUSSIN B CARGEMEL V CARRIERE C
Citation
E. Vassilakis et al., 20W CW SURFACE-EMITTING 0.8-MU-M GAAS GAALAS LASER-DIODES/, Electronics Letters, 31(13), 1995, pp. 1056-1057
Citations number
8
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
13
Year of publication
1995
Pages
1056 - 1057
Database
ISI
SICI code
0013-5194(1995)31:13<1056:2CS0GG>2.0.ZU;2-2
Abstract
A continuous-wave optical power density of 200W/cm(2) is reported for the first time for a 0.1 cm(2) element of a surface emitting GaAs/GaAl As wafer. The laser facets are cleaved on-wafer by a microcleavage tec hnique. The output optical beam is reflected by 45 degrees-integrated beam deflectors situated at a distance of 15 mu m from each laser face t. The lasers were soldered junction-up on a microchannel CuW cooler. The drive current at 20 W CW is 40A with a slope efficiency of 0.7W/A.