STRAINED-LAYER INGAAS-GAAS-ALGAAS BURIED-HETEROSTRUCTURE LASERS WITH NONABSORBING MIRRORS BY SELECTIVE-AREA MOCVD

Authors
LAMMERT RM SMITH GM FORBES DV OSOWSKI ML COLEMAN JJ
Citation
Rm. Lammert et al., STRAINED-LAYER INGAAS-GAAS-ALGAAS BURIED-HETEROSTRUCTURE LASERS WITH NONABSORBING MIRRORS BY SELECTIVE-AREA MOCVD, Electronics Letters, 31(13), 1995, pp. 1070-1072
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
13
Year of publication
1995
Pages
1070 - 1072
Database
ISI
SICI code
0013-5194(1995)31:13<1070:SIBLWN>2.0.ZU;2-N
Abstract
Design, fabrication and operation of strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure (BH) lasers with nonabsorbing mirrors fabricat ed by selective-area epitaxy (SAE) are presented. The SAE-BH lasers wi th nonabsorbing mirrors operate at powers up to similar to 325 mW/face t (4 mu m wide output aperture), which is a 40% increase over conventi onal SAE-BH lasers.