CRYSTAL SILICON FABRY-PEROT CAVITIES DEPOSITED WITH DICHLOROSILANE INA REDUCED PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR FOR THERMAL SENSING

Authors
CHAO HC NEUDECK GW
Citation
Hc. Chao et Gw. Neudeck, CRYSTAL SILICON FABRY-PEROT CAVITIES DEPOSITED WITH DICHLOROSILANE INA REDUCED PRESSURE CHEMICAL-VAPOR-DEPOSITION REACTOR FOR THERMAL SENSING, Electronics Letters, 31(13), 1995, pp. 1101-1102
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
13
Year of publication
1995
Pages
1101 - 1102
Database
ISI
SICI code
0013-5194(1995)31:13<1101:CSFCDW>2.0.ZU;2-6
Abstract
A surface-normal Fabry-Perot (FP)thermal sensor with embedded multiple QW dielectric mirrors, was fabricated and evaluated using a single cr ystal merged silicon epitaxial lateral overgrowth (MELO) technique. Th e sensitivity of the sensor has been improved owing to the higher fine sse.