LOW-RESISTANCE (APPROXIMATE-TO-10(-6) OMEGA-CM(2)) OHMIC CONTACT TO N-GAAS PROCESSED AT 175-DEGREES-C

Authors
HAO PH WANG LC WU BJ
Citation
Ph. Hao et al., LOW-RESISTANCE (APPROXIMATE-TO-10(-6) OMEGA-CM(2)) OHMIC CONTACT TO N-GAAS PROCESSED AT 175-DEGREES-C, Electronics Letters, 31(13), 1995, pp. 1106-1108
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
31
Issue
13
Year of publication
1995
Pages
1106 - 1108
Database
ISI
SICI code
0013-5194(1995)31:13<1106:L(OOCT>2.0.ZU;2-7
Abstract
A low resistance (10(-6)Omega cm(2)) Au/Ge/Pd ohmic contact processed at 175 degrees C has been developed to n-GaAs (n similar or equal to 1 0(18)cm(-3)). The ohmic contact formation mechanism can be rationalise d in terms of the solid phase regrowth (SPR) principle and the interdi ffusion of Au and Ge.