A. Goossens et J. Schoonman, ELECTROCHEMICAL INVESTIGATIONS OF SILICON BORON PHOSPHIDE HETEROJUNCTION PHOTOELECTRODES/, Electrochimica acta, 40(10), 1995, pp. 1339-1344
An electrochemical study of Si/BP heterojunction photoelectrodes was u
ndertaken in order to explore the feasibility of utilizing such electr
odes in liquid junction solar cells. It appears that in the case of n-
type Si/n-type BP heterostructures, only low photocurrent densities ar
e produced by the electron-hole pairs generated in the wide-bandgap BP
window. In contrast, p-type Si/n-type BP heterojunctions show large c
athodic photocurrents upon irradiation with visible light. Detailed im
pedance analysis was carried out to derive the band diagrams of the tw
o studied configurations. It appears that an excellent match between t
he conduction bands of Si and BP is present, which explains the observ
ed effects. In addition, surface trapping and recombination phenomena
at the BP/electrolyte interface were explored with impedance technique
s.