ELECTROCHEMICAL INVESTIGATIONS OF SILICON BORON PHOSPHIDE HETEROJUNCTION PHOTOELECTRODES/

Citation
A. Goossens et J. Schoonman, ELECTROCHEMICAL INVESTIGATIONS OF SILICON BORON PHOSPHIDE HETEROJUNCTION PHOTOELECTRODES/, Electrochimica acta, 40(10), 1995, pp. 1339-1344
Citations number
13
Categorie Soggetti
Electrochemistry
Journal title
ISSN journal
00134686
Volume
40
Issue
10
Year of publication
1995
Pages
1339 - 1344
Database
ISI
SICI code
0013-4686(1995)40:10<1339:EIOSBP>2.0.ZU;2-O
Abstract
An electrochemical study of Si/BP heterojunction photoelectrodes was u ndertaken in order to explore the feasibility of utilizing such electr odes in liquid junction solar cells. It appears that in the case of n- type Si/n-type BP heterostructures, only low photocurrent densities ar e produced by the electron-hole pairs generated in the wide-bandgap BP window. In contrast, p-type Si/n-type BP heterojunctions show large c athodic photocurrents upon irradiation with visible light. Detailed im pedance analysis was carried out to derive the band diagrams of the tw o studied configurations. It appears that an excellent match between t he conduction bands of Si and BP is present, which explains the observ ed effects. In addition, surface trapping and recombination phenomena at the BP/electrolyte interface were explored with impedance technique s.